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ECO-PAC 2 PSHI 100/06* H-Bridge Configuration
Preliminary Data Sheet
TM
IGBT Module
IC25 = 69 A VCES = 600 V VCE(sat)typ. = 2.3 V
Short Circuit SOA Capability Square RBSOA
F10 A1 K10 K13 H13
S18 N9
IGBTs
Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 22 ; TVJ = 125C non-repetitive TC = 25C Conditions Conditions TVJ = 25C to 150C
NTC
P18
PSHI 100/06*
*NTC optional
Features
Maximum Ratings 600 20 69 48 100 VCES 10 208 V V A A A s W
* * * * * * * * * * * * * * * * * * *
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.3 2.8 4.5 2.8 6.5 0.8 4.4 100 50 55 300 30 1.8 1.4 2.8 1.2 V V V mA mA nA ns ns ns ns mJ mJ nF 0.6 K/W K/W
NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate Isolation voltage 3000 V UL registered, E 148688
Advantages space and weight savings reduced protection circuits package designed for wave soldering High power density Easy to mount with two screws
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH
IC = 75 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C
VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 40 A VGE = 15/0 V; RG = 22
Typical Applications motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger
VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)
with heatsink compound (0.42 K/m.K; 50 m)
Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSHI 100/06
Reverse diodes (FRED)
Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 40 A; TVJ = 25C TVJ = 125C IF = 30 A; diF/dt = 500 A/s; TVJ = 125C VR = 300 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 m)
Maximum Ratings 56 35 A A
Package style and outline
Dimensions in mm (1mm = 0.0394")
Characteristic Values min. typ. max. 2.32 1.58 15 70 2.6 2.59 V V A ns 1.3 K/W K/W
Temperature Sensor NTC
Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 455 470 3474 485 k K
Module
Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2
Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSHI 100/06
150
A 120
VGE= 17 V 15 V 13 V
150 A 120 90
11V VGE= 17 V 15 V 13 V
IC
IC
90 60 30 0
11V TVJ = 125C
TVJ = 25C 9V
60 30 0
9V
42T60
42T60
0
1
2
3
4
VCE
5
V
6
0
1
2
3
4
VCE
5V
6
Fig. 1 Typ. output characteristics
150
A 120 IC
VCE = 20 V
Fig. 2 Typ. output characteristics
90 A 75 IF 60 45
90 60
TVJ = 125C TVJ = 25C
TVJ = 125C
TVJ = 25C
30 15
42T60
30 0
0
42T60
4
6
8
10
12
VGE
14 V 16
0,0
0,5
1,0
VF
1,5
V
2,0
Fig. 3 Typ. transfer characteristics
50 40 A
VCE = 300 V IC = 50 A
Fig. 4 Typ. forward characteristics of free wheeling diode
150 120 ns 90
TVJ = 125C VR = 300 V IF = 30 A IRM
20
V
15
VGE
IRM
trr
trr
30 20
10
60 30
42T60
5
10
42T60
0
0
0
40
80
120
QG
nC
160
0
200
400
600
-di/dt
800 A/s
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSHI 100/06
10,0
mJ Eon 100 ns 75 tr
VCE = 300 V VGE = 15 V
td(on)
4
mJ t Eoff Eoff
400 ns 300 t
7,5
3
5,0
50
2
td(off)
VCE = 300 V VGE = 15 V RG = 22 TVJ = 125C
200
2,5
Eon
RG = 22 TVJ = 125C
42T60
25
1
100 tf
0,0
0
40
80
IC
A
120
0
0
42T60
0
40
80 IC
A
0 120
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current
3
mJ 600 ns
4
mJ Eon
td(on) Eon tr
80 ns 60 t
Eoff
3
VCE = 300 V VGE = 15 V IC = 50 A TVJ = 125C
42T60
2
VCE = 300 V VGE = 15 V IC = 50 A TVJ = 125C
Eoff td(off)
400
t
2
40
1
200
1
0
10
20
30
40
RG
50 60
20
0
tf
42T60
0
10
20
30
40
RG
50 60
0
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor
10 K/W ZthJC 1
diode IGBT
120
A ICM
90
RG = 22 TVJ = 125C
0,1 0,01
60
30
0,001
42T60
single pulse
0
0
100
200
300
400
500
600
VCE
700 V
0,0001 0,00001 0,0001 0,001
VID...75-06P1
0,01
0,1 t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance RBSOA
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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